High-quality SiC single crystals are mainly prepared by physical vapor transport (PVT) and high-temperature chemical vapor deposition (HTCVD). The PVT method sublimates SiC source powder at high temperature, causing the components in it to condense on the surface of the seed crystal to grow high-quality SiC single crystals. The HTCVD method synthesizes SiC crystals at high temperatures through chemical vapor deposition.
